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| CGY 0819 GaAs MMIC l l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control Input matched to 50 ohms, simple output match on PCB ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 0819 CGY 0819 Q62702G0076 MW 16 Maximum ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation duty cycle 12.5%, ton=0.577ms Total power dissipation (Ts 80 C) Ts: Temperature at soldering point Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 11 Unit K/W Symbol VD max. Value 9 4 150 -55...+150 tbd tbd Unit V A C C W W ID TCh Tstg PPulse Ptot RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Functional Block Diagram: Pin Configuration: Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name VD Cell RF IN Cell Vneg Vcon cell Vcon PCS Vneg RF IN PCS VD PCS RF out PCS RF out PCS RF out PCS RF out PCS GND RF out Cell RF out Cell RF out Cell Configuration Drain voltage cell preamplifier stage RF IN Cell Band Negative voltage Control voltage cell. PA Control voltage PCS PA Negative voltage RF IN PCS Band Drain voltage PCS preamplifier stage RF out PCS RF out PCS RF out PCS RF out PCS RF Ground RF out Cell RF out Cell RF out Cell 2 2 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo Siemens Aktiengesellschaft Semiconductor Group CGY 0819 Electrical Characteristics (TA = 25C , ZS=ZL=50 Ohm, VD=3.5V, IDq=300mA, unless otherwise specified ) Characteristics Frequency range Cellular frequency band PCS frequency band Duty cycle AMPS output power TDMA cellular output power AMPS gain at max. output TDMA cellular gain at max. output TDMA PCS output power TDMA PCS gain at max. output CDMA cellular output power CDMA cellular gain at max. output CDMA PCS output power CDMA PCS gain at max. output Power ramping characteristic Full output power Pinch off Adjacent Channel Power CDMA 900kHz offset (cellular band) 1.25 MHz offset (PCS band) 1.98 MHz offset Adjacent channel power TDMA adjacent alternate 2nd alternate AMPS efficiency TDMA DC to RF efficiency @Padj=-26dBc at max. output Cellular Band: PCS Band CDMA DC to RF efficiency @Padj=-42dBc at max. output Cellular Band PCS Band at Pout=10 dBm ( Iq set to 100mA ) Siemens Aktiengesellschaft Semiconductor Group 3 3 Symbol min 824 1850 typ max 849 1910 100 Unit MHz f tON/tOFF P P G G P G P G P G Vcontr 2.5 0.5 Padj/Pmain 31,5 30 24 27 29 24 28 28 29 24 % dBm dBm dB dB dBm dB dBm dB dBm dB V -45 -45 -54 Padj/Pmain -28 -45 -45 55 dBc @ 30kHz dBc @ 30kHz PAE PAE % % 40 40 PAE % 35 40 8 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Characteristics Receive band noise power density Cell band ( 869 to 894 MHz ) PCS band ( 1930 to 1990 MHz ) DC supply voltage range Negative supply voltage range Standby current @Vcon=0V Quiescent current Current consumption at VContr Current consumption at VNEG Operating temperature range Power on sequence: 1. connect negative voltage to PA 2. connect control voltage to PA 3. turn on Vd 4. turn on Pin Symbol PRX min typ max -137 -145 Unit dBm/Hz VD Vneg Ipwr dwn IQ IControl INEG 3 -5.0 3.5 500 300 2 2 4.0 -7 V V A mA mA mA -30 +85 C To switch off the device please use reverse sequence. Siemens Aktiengesellschaft Semiconductor Group 4 4 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Application Circuit: 100p 33 nH L3 C2 3p9 C1 IC1 1 2 3 4 5 6 7 8 VD1Cell RFinCell VnegCell VconCell VconPCS VnegPCS RFinPCS VD1PCS RFout3Cell RFout2Cell RFout1Cell GND RFout4PCS RFout3PCS RFout2PCS RFout1PCS L4 8n2 C3 5p6 HQ Vcon Cell Vcon PCS 10p HQ RFin Cell C7 10n C9 100p RFin PCS 10n C8 3p9 HQ C17 100p BCP 72 Vd 17 CGY0819 C15 1u0 1u0 R4 1k0 R3 Vsw V3 10n C19 10n 68R C20 33n C23 3 1 BAS 40-04 2 V2 Vaux C21 33n 3k9 R2 C22 CLK 1n0 680R R1 V1 10uH L1 1n0 BC848B Evaluation Board Parts List Part Type Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Position C1 C2, C3, C6, C7, C10, C16, C18 C4 C5 C8, C9, C11, C19 C12, C13, C14, C15 C17 C20, C21 C22, C23 Description 3.9pF 0403 100pF 0402 5.6pF 0603 HQ 10pF 0603 HQ 10nF0402 1u0 1206 3.9pF 0603 HQ 33nF 0402 1nF 0402 5 5 Manufacturer Siemens Siemens AVX AVX Siemens 100p C12 C13 C14 C16 1u0 1u0 C11 L2 GND (backside MW16) 33 nH 100p C10 16 15 14 13 12 11 10 9 C6 RFout Cel C4 C5 100p C18 RFout PCS 100p Part Number 06035J5R6GBT 06035J100GBT AVX Siemens Siemens 06035J3R9BBT Siemens Aktiengesellschaft Semiconductor Group 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Part Type Inductor Inductor Inductor Resistor Resistor Resistor Resistor Transistor Diode Transistor IC Substrate Position L1 L2, L3 L4 R1 R2 R3 R4 V1 V2 V3 IC1 Description 10uH Air Coil 33nH 8.2nH 0603 680 Ohm 0402 3.9k 0402 68 Ohm 0805 1.0k 0402 BC848B BAS40-04W BCP72 CGY0819 FR4, h=0.2mm,r=4.5 Manufacturer Siemens H. David GmbH TOKO Part Number PN/BV 1250 Siemens Siemens Siemens Siemens Siemens Evaluation Board: Vcon Cell Vcon Siemens Dual Band PA Cellular C1 C19 C2 C3 L3 C9 C8 C7 IC1 C4 L4 C5 C11 C17 C16 C10 CGY0819 V3 C12 C13 C23 C14 C15 V1 R1 R3 R4 C20 V2 Vcon L1 C22 Vsw Vd R2 PCS Vaux Vcon PCS Vd Vsw Vaux C21 CLK CLK Siemens Aktiengesellschaft Semiconductor Group 6 6 RFout PCS RFin PCS L2 C18 RFout Cell RFin Cell C6 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Typical Performance in Cellular AMPS Operation Mode AMPS Mode: PAE & Pout vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C 60 50 40 AMPS Mode: TG & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C 35 30 Pout [dBm] 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 Pin [dBm] 70.00 60.00 50.00 PAE [%] TG [dB] 900 750 600 450 300 TG [dB] Id [mA] 150 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 Pin [dBm] Id [mA] 850 40.00 30.00 Pout [dBm] 20.00 PAE [%] 10.00 0.00 30 20 10 0 AMPS Mode: Pout vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25C AMPS Mode: PAE vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25C 34 58 33 Pout [dBm] 56 32 PAE [%] 54 31 52 3 3.2 3.4 Vd [V] 3.6 3.8 4 3 3.2 3.4 Vd [V] 3.6 3.8 4 30 AMPS Mode: Pout vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25C 33 32.8 32.6 32.4 32.2 32 31.8 31.6 31.4 31.2 31 820 58 57 56 PAE [%] 55 54 53 52 820 AMPS Mode: PAE vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25C Pout [dBm] 825 830 835 f [MHz] 840 845 850 825 830 835 f [MHz] 840 845 Siemens Aktiengesellschaft Semiconductor Group 7 7 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Typical Performance in Cellular CDMA Operation Mode: CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C 40 35 Pout [dBm], PAE [%] 30 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 Pin [dBm] Pout [dBm] PAE [%] Id [mA] 800 700 600 Id [mA] 500 400 300 200 100 0 ACPR [dBc] 70 60 50 40 30 20 10 0 14 16 18 20 22 Pout [dBm] 24 26 28 30 ACP885 [dBc] ACP1,98 [dBc] TG [dB] 30 29 28 27 26 25 24 23 TG [dB] 850 CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 50 49 48 47 46 45 44 43 42 41 40 820 825 830 835 f [MHz] 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 CDMA Mode: Gain vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA CDMA Mode: PAE vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 Siemens Aktiengesellschaft Semiconductor Group 8 8 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA C DMA Mode: AC PR @1,98MHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 50 49 48 47 46 45 44 43 42 41 40 820 825 830 835 f [MHz] 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 850 CDMA Mode: Gain vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA CDMA Mode: PAE vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 CDMA Mode: ACPR @885kHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 50 49 48 47 46 45 44 43 42 41 40 820 825 830 835 f [MHz] 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 850 Siemens Aktiengesellschaft Semiconductor Group 9 9 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 CDMA Mode: Gain vs. f Vd=4V, Pout=29,5dBm, Iq=300mA CDMA Mode: PAE vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 Typical Performance in Cellular TDMA Operation Mode TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C 45 40 Pout [dBm], PAE [%] 35 30 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 Pin [dBm] Pout [dBm] PAE [%] Id [mA] 900 800 700 ACPR [dBc] 600 500 400 300 200 100 0 Id [mA] 80 70 60 50 40 30 20 10 0 14 16 18 20 22 24 26 28 30 Pout [dBm] Padj [dBc] Palt [dBc] TG [dB] 30 29 28 TG [dB] 850 27 26 25 24 23 22 TDMA Mode: Padj vs. f Vd=3,0V, Pout=29dBm, Iq=300mA TDMA Mode: Palt vs. f Vd=3,0V, Pout=29dBm, Iq=300mA 35 34 33 32 31 30 29 28 27 26 25 820 825 830 835 f [MHz] 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 Siemens Aktiengesellschaft Semiconductor Group 10 10 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 TDMA Mode: Gain vs. f Vd=3V, Pout=29dBm, Iq=300mA TDMA Mode: PAE vs. f Vd=3V, Pout=29dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 TDMA Mode: Padj vs. f Vd=3,5V, Pout=30dBm, Iq=300mA TDMA Mode: Palt vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 35 34 33 32 31 30 29 28 27 26 25 820 825 830 835 f [MHz] 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 850 TDMA Mode: Gain vs. f Vd=3,5V, Pout=30dBm, Iq=300mA TDMA Mode: PAE vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 Siemens Aktiengesellschaft Semiconductor Group 11 11 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 TDMA Mode: Padj vs. f Vd=4V, Pout=31dBm, Iq=300mA TDMA Mode: Palt vs. f Vd=4V, Pout=31dBm, Iq=300mA 35 34 33 32 31 30 29 28 27 26 25 820 825 830 835 f [MHz] 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 850 TDMA Mode: Gain vs. f Vd=4V, Pout=31dBm, Iq=300mA TDMA Mode: PAE vs. f Vd=4V, Pout=31dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 Typical Performance in PCS CDMA Operation Mode: CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=250m A, f=1880 MHz, T=25C 40 35 Pout [dBm], PAE [%] 30 25 20 15 10 5 0 -10 Pout [dBm] PAE [%] Id [mA] 800 700 600 500 400 300 200 100 0 -8 -6 -4 -2 0 2 4 6 8 Pin [dBm] Id [mA] ACPR [dBc] 80 70 60 50 40 30 20 10 0 14 16 18 20 22 Pout [dBm] 24 26 28 30 ACP1,25 [dBc] ACP1,98 [dBc] TG [dB] CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=250m A, f=1880 MHz, T=25C 26 25 24 TG [dB] 23 22 21 20 19 18 Siemens Aktiengesellschaft Semiconductor Group 12 12 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=3,0V, Pout=28dBm , Iq=250mA 50 49 48 47 ACPR [dBc] 46 45 44 43 42 41 40 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 60 59 58 57 56 55 54 53 52 51 50 1850 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=28dBm, Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 CDMA Mode: Gain vs. f Vd=3,0V, Pout=28dBm, Iq=250m A 25 24 23 22 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 30 1850 PAE [%] TG [dB] 21 40 38 36 34 32 42 CDMA Mode: PAE vs. f Vd=3,0V, Pout=28dBm , Iq=250mA 1860 1870 1880 f [MHz] 1890 1900 1910 CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 50 49 48 47 ACPR [dBc] 46 45 44 43 42 41 40 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 60 59 58 57 56 55 54 53 52 51 50 1850 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 Siemens Aktiengesellschaft Semiconductor Group 13 13 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 CDMA Mode: Gain vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 25 24 23 22 CDMA Mode: PAE vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 40 39 38 37 PAE [%] 36 35 34 33 32 31 30 1850 TG [dB] 21 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 1860 1870 1880 f [MHz] 1890 1900 1910 CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=4V, Pout=30dBm , Iq=250m A 50 49 48 47 ACPR [dBc] 46 45 44 43 42 41 40 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 60 59 58 57 56 55 54 53 52 51 50 1850 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=30dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 CDMA Mode: Gain vs. f Vd=4V, Pout=30dBm , Iq=250m A 25 24 23 22 21 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 CDMA Mode: PAE vs. f Vd=4V, Pout=30dBm , Iq=250m A 40 39 38 37 PAE [%] 36 35 34 33 32 31 30 1850 1860 1870 1880 f [MHz] 1890 1900 1910 Siemens Aktiengesellschaft Semiconductor Group TG [dB] 14 14 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Typical Performance in PCS TDMA Operation Mode: TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=250mA, f=1880 MHz, T=25C 70 40 35 Pout [dBm], PAE [%] 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 Pout [dBm] PAE [%] Id [mA] 4 6 8 800 700 600 ACPR [dBc] Id [mA] 500 400 300 200 100 0 Pin [dBm] 50 40 30 20 10 0 14 60 TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=250m A, f=1880 MHz, T=25C 25 24 23 22 21 Padj [dBc] Palt [dBc] TG [dB] 18 16 18 20 22 Pout [dBm] 24 26 28 30 20 19 TG [dB] 1910 1910 TDMA Mode: Padj vs. f Vd=3,0V, Pout=28dBm , Iq=250m A 35 34 33 32 ACPR [dBc] 31 30 29 28 27 26 25 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 55 54 53 52 51 50 49 48 47 46 45 1850 TDMA Mode: Palt vs. f Vd=3,0V, Pout=28dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 TDMA Mode: Gain vs. f Vd=3V, Pout=28dBm , Iq=250m A 25 24 23 22 TDMA Mode: PAE vs. f Vd=3V, Pout=28dBm , Iq=250m A 45 44 43 42 PAE [%] 41 40 39 38 37 36 35 1850 TG [dB] 21 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 1860 1870 1880 f [MHz] 1890 1900 Siemens Aktiengesellschaft Semiconductor Group 15 15 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 TDMA Mode: Padj vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 35 34 33 32 ACPR [dBc] 31 30 29 28 27 26 25 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 55 54 53 52 51 50 49 48 47 46 45 1850 TDMA Mode: Palt vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 TDMA Mode: Gain vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 25 24 23 22 21 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 TDMA Mode: PAE vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 45 44 43 42 PAE [%] 41 40 39 38 37 36 35 1850 1860 1870 1880 f [MHz] 1890 1900 1910 TG [dB] TDMA Mode: Padj vs. f Vd=4V, Pout=30dBm , Iq=250m A 35 34 33 32 ACPR [dBc] 31 30 29 28 27 26 25 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 55 54 53 52 51 50 49 48 47 46 45 1850 TDMA Mode: Palt vs. f Vd=4V, Pout=30dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 Siemens Aktiengesellschaft Semiconductor Group 16 16 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 TDMA Mode: Gain vs. f Vd=4V, Pout=30dBm , Iq=250m A 25 24 23 22 TG [dB] 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 PAE [%] 43 42 41 40 39 38 37 36 35 34 33 1850 TDMA Mode: PAE vs. f Vd=4V, Pout=30dBm , Iq=250m A 21 1860 1870 1880 f [MHz] 1890 1900 1910 Siemens Aktiengesellschaft Semiconductor Group 17 17 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstrae 73, D-81541 Munchen copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer Siemens Aktiengesellschaft Semiconductor Group 18 18 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo |
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